TSM1NB60CH C5G

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Overview of TSM1NB60CH C5G

Part NumberTSM1NB60CH C5G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 600V 1A TO251
DatasheetsDownload TSM1NB60CH C5G Datasheet PDFPDF Icon
Price for TSM1NB60CH C5G

Specification of TSM1NB60CH C5G

Status
Active
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
138 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
39W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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